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MITSUBISHI CM75E3Y-12E IGBT Module

#MITSUBISHI, #CM75E3Y_12E, #IGBT_Module, #IGBT, CM75E3Y-12E Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; CM75E3Y-12E

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 41
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CM75E3Y-12E Specification

Sell CM75E3Y-12E, #MITSUBISHI #CM75E3Y-12E Stock, CM75E3Y-12E Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; CM75E3Y-12E, #IGBT_Module, #IGBT, #CM75E3Y_12E
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Manufacturer Part Number: CM75E3Y-12EPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: ,Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Collector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODENumber of Elements: 1Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 750 nsTurn-on Time-Nom (ton): 450 ns Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

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