Sanrex DF200AA160 | A Robust 1600V Dual IGBT Module for High-Stress Power Systems
The Sanrex DF200AA160 is an engineered solution for power electronics designers who require exceptional voltage headroom and proven reliability in demanding applications. As a dual IGBT module rated for 1600V and 200A, it provides a robust building block for high-power inverters, converters, and motor control systems where operational security under high voltage stress is paramount.
- High Voltage Blocking Capability: With a collector-emitter voltage (Vces) of 1600V, this module offers a significant safety margin for systems operating on 480V to 690V AC lines, protecting against transient overvoltage events.
- Dual IGBT Configuration: The half-bridge (2-in-1) topology simplifies the design of inverter legs and other common power conversion stages, reducing component count and simplifying PCB layout.
- Integrated Fast Recovery Diode (FRD): Each IGBT is paired with a co-packaged freewheeling diode optimized for fast, soft recovery, minimizing reverse recovery losses and EMI generation during switching.
- Standard Industrial Package: Housed in a widely adopted package, the DF200AA160 facilitates straightforward mechanical mounting, thermal management, and integration into existing designs.
Application Scenarios & Engineering Value
The specific characteristics of the Sanrex DF200AA160 make it a strategic choice for several key industrial applications. Its value lies not just in its ratings, but in how it solves specific engineering challenges.
High-Power Variable Frequency Drives (VFDs): In industrial motor control, especially for large induction motors, reliability is non-negotiable. The 1600V rating of the DF200AA160 provides the necessary resilience against voltage spikes caused by long motor cables and inductive load switching. Its 200A current handling is well-suited for drives in the 75-110 kW power class, ensuring stable operation in heavy-duty machinery like pumps, fans, and conveyors. For a deeper understanding of the core principles, explore our guide on the in-depth analysis of IGBT modules.
Uninterruptible Power Supplies (UPS): For commercial and industrial UPS systems, the ability to withstand input power line fluctuations is critical. This module's high voltage rating ensures the inverter stage remains protected and operational during sags, swells, and other power quality events. The dual configuration is ideal for building the H-bridge or three-phase inverter stages at the core of online double-conversion UPS architectures.
Welding Power Supplies: Inverter-based welding supplies demand components that can handle repetitive short-circuit conditions and high thermal cycling. The robust construction of the Sanrex DF200AA160, while a legacy design, is indicative of the ruggedness required to survive the harsh electrical environment of arc welding applications, providing consistent power delivery for high-quality welds.
Key Technical Parameters
The following table outlines the critical specifications for the DF200AA160. For a comprehensive list of parameters and operating curves, you can download the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1600V |
| Continuous Collector Current (Ic) @ Tc=80°C | 200A |
| Collector-Emitter Saturation Voltage (Vce(sat)), Typ. | 2.7V (@ Ic=200A, Tj=125°C) |
| Collector-Emitter Saturation Voltage (Vce(sat)), Max. | 3.5V (@ Ic=200A, Tj=125°C) |
| Gate-Emitter Voltage (Vges) | ±20V |
| Total Power Dissipation (Pc) | 1300W |
| Operating Junction Temperature (Tj) | -40 to +150°C |
Engineer's FAQ for the DF200AA160
Based on our experience, here are some common questions engineers have when considering a module like the Sanrex DF200AA160.
1. The Vce(sat) of 3.5V seems higher than modern IGBTs. What is the implication?
This is an excellent observation. The Vce(sat) is a trade-off against the high blocking voltage (Vces) of 1600V. In devices of this voltage class, a thicker N-drift region is required to support the high electric field, which inherently increases on-state resistance and thus Vce(sat). While this leads to higher conduction losses compared to a 1200V equivalent, the primary benefit is the significantly enhanced safety margin and ruggedness in high-voltage circuits. Effective Thermal Resistance management through proper heatsinking is crucial. For guidance on preventing issues, our article on IGBT failure analysis is a valuable resource.
2. Can these modules be paralleled for higher current output?
Yes, the DF200AA160 can be paralleled, but it requires careful design. Due to the positive temperature coefficient of Vce(sat) typical in non-punch-through (NPT) or field-stop IGBTs, thermal runaway is less of a concern. However, ensuring symmetrical layout for busbars and gate drive paths is critical to prevent unequal current sharing and oscillation. It is also recommended to use gate resistors with tight tolerances for each paralleled module to balance switching dynamics.
For specific application notes or to discuss whether the Sanrex DF200AA160 is the right fit for your power system design, contact our technical team for expert consultation.
