#EUPEC, #FF1200R17KE3_B2, #IGBT_Module, #IGBT, FF1200R17KE3_B2 Insulated Gate Bipolar Transistor, 1700A I(C), 1700V V(BR)CES, N-Channel, MODULE-10; FF1200R17KE3_B2
Manufacturer Part Number: FF1200R17KE3_B2Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-10Pin Count: 10ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.49Case Connection: ISOLATEDCollector Current-Max (IC): 1700 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X10Number of Elements: 2Number of Terminals: 10Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 6600 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1700A I(C), 1700V V(BR)CES, N-Channel, MODULE-10