#EUPEC, #FP10R12W1T4_B3, #IGBT_Module, #IGBT, FP10R12W1T4-B3 Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21; FP10R12W1T4-B3
Manufacturer Part Number: FP10R12W1T4_B3 Pbfree Code: Yes Part Life Cycle Code: Active Ihs Manufacturer: Infineon TECHNOLOGIES AG Part Package Code: MODULE Package Description: FLANGE MOUNT, R-XUFM-X21 Pin Count: 21 ECCN Code: EAR99 Manufacturer: Infineon Technologies AG Risk Rank: 5.52 Case Connection: ISOLATED Collector Current-Max (IC): 20 A Collector-Emitter Voltage-Max: 1200 V Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Gate-Emitter Voltage-Max: 20 V JESD-30 Code: R-XUFM-X21 Number of Elements: 6 Number of Terminals: 21 Operating Temperature-Max: 175 °C Package Body Material: UNSPECIFIED Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Peak Reflow Temperature (Cel): NOT SPECIFIED Polarity/Channel Type: N-CHANNEL Power Dissipation-Max (Abs): 105 W Qualification Status: Not Qualified Subcategory: Insulated Gate BIP Transistors Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21