Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

Infineon FP10R12W1T4-B3 IGBT Module

FP10R12W1T4-B3 Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 26
· Date Code: 2020+
. Available Qty: 222
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869

Contact us To Buy Now !

Sending...Please Wait.

FP10R12W1T4-B3 Specification

Manufacturer Part Number: FP10R12W1T4_B3
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X21
Pin Count: 21
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.52
Case Connection: ISOLATED
Collector Current-Max (IC): 20 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X21
Number of Elements: 6
Number of Terminals: 21
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 105 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER

Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21

Latest Update
Microsemi
KSS KINSEKI
Sharp