Infineon Technologies IPG20N06S3L-23 IGBT Module

Manufacturer Part Number: IPG20N06S3L-23Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.62Additional Feature: LOGIC LEVEL COMPATIBLEAvalanche Energy Rating (Eas): 110 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 55 VDrain Current-Max (Abs) (ID): 20 ADrain Current-Max (ID): 33 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 45 WPulsed Drain Current-Max (IDM): 80 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 33A I(D), 55V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8