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International Rectifier IRG4RC10UDPBF New IGBT Module

IRG4RC10UDPBF
# International Rectifier , #IRG4RC10UDPBF, #IGBT_Module, #IGBT, IRG4RC10UDPBF Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3; IRG4R
  • Category: IGBT Module
  • Manufacturer: International Rectifier
  • Package Type:
  • Date Code: Lead free / RoHS Compliant
  • Available Qty: 929

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IRG4RC10UDPBF Description

Sell IRG4RC10UDPBF, # International Rectifier #IRG4RC10UDPBF New Stock, IRG4RC10UDPBF Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3; IRG4RC10UDPBF, #IGBT_Module, #IGBT, #IRG4RC10UDPBF
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URL: https://www.slw-ele.com/irg4rc10udpbf.html
Manufacturer Part Number: IRG4RC10UDPBF
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: LEAD FREE, DPAK-3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 8.56
Additional Feature: LOW CONDUCTION LOSS
Case Connection: COLLECTOR
Collector Current-Max (IC): 8.5 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf): 210 ns
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-252AA
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 38 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3

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