#IXYS, #IXA20I1200PB, #IGBT_Module, #IGBT, IXA20I1200PB Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC P
Manufacturer Part Number: IXA20I1200PBPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.21Collector Current-Max (IC): 33 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 130 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3