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IXYS IXA20I1200PB IGBT Module

#IXYS, #IXA20I1200PB, #IGBT_Module, #IGBT, IXA20I1200PB Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC P

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 763
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IXA20I1200PB Specification

Sell IXA20I1200PB, #IXYS #IXA20I1200PB Stock, IXA20I1200PB Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; IXA20I1200PB, #IGBT_Module, #IGBT, #IXA20I1200PB
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixa20i1200pb.html

Manufacturer Part Number: IXA20I1200PBPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.21Collector Current-Max (IC): 33 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 130 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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