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IXYS IXA33IF1200HB New IGBT Module

IXA33IF1200HB
# IXYS , #IXA33IF1200HB, #IGBT_Module, #IGBT, IXA33IF1200HB Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC,
  • Category: IGBT Module
  • Manufacturer: IXYS
  • Package Type:
  • Date Code: Lead free / RoHS Compliant
  • Available Qty: 1735

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IXA33IF1200HB Description

Sell IXA33IF1200HB, # IXYS #IXA33IF1200HB New Stock, IXA33IF1200HB Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC, COPACK-3; IXA33IF1200HB, #IGBT_Module, #IGBT, #IXA33IF1200HB
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixa33if1200hb.html
Manufacturer Part Number: IXA33IF1200HB
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Part Package Code: TO-247AD
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
ECCN Code: EAR99
Manufacturer: IXYS Corporation
Risk Rank: 2.24
Additional Feature: LOW CONDUCTION LOSS
Collector Current-Max (IC): 58 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max: 6.5 V
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-247AD
JESD-30 Code: R-PSFM-T3
JESD-609 Code: e1
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 250 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC, COPACK-3

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