#IXYS, #IXFN60N80P, #IGBT_Module, #IGBT, IXFN60N80P Power Field-Effect Transistor, 53A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: IXFN60N80PPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.28Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 5000 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 800 VDrain Current-Max (ID): 53 ADrain-source On Resistance-Max: 0.14 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 250 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 53A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4