#IXYS, #IXGT20N140C3H1, #IGBT_Module, #IGBT, IXGT20N140C3H1 Insulated Gate Bipolar Transistor, 42A I(C), 1400V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN; IXGT20N1
Manufacturer Part Number: IXGT20N140C3H1Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.82Additional Feature: ULTRA FASTCase Connection: COLLECTORCollector Current-Max (IC): 42 ACollector-Emitter Voltage-Max: 1400 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 42A I(C), 1400V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN