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IXYS IXTN21N100

  • IXTN21N100
  • IXTN21N100 Power Field-Effect Transistor, 21A I(D), 1000V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4; IXTN21N100

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 202
    MOQ: 1 PC
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    Content last revised on November 2, 2023

    Manufacturer Part Number: IXTN21N100Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: SOT-227Package Description: SOT-227B, MINIBLOC-4Pin Count: 4ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: IXYS CorporationRisk Rank: 5.8Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 1000 VDrain Current-Max (Abs) (ID): 21 ADrain Current-Max (ID): 21 ADrain-source On Resistance-Max: 0.55 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 520 WPower Dissipation-Max (Abs): 520 WPulsed Drain Current-Max (IDM): 84 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 21A I(D), 1000V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4