Content last revised on June 26, 2023
Manufacturer Part Number: IXTT30N60L2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 2000 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.24 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 80 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: PURE TINTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
