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IXYS IXYB82N120C3H1 New IGBT Module

#IXYS, #IXYB82N120C3H1, #IGBT_Module, #IGBT, IXYB82N120C3H1 Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN; IXYB82N120C3H1

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 358
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IXYB82N120C3H1 Specification

Sell IXYB82N120C3H1, #IXYS #IXYB82N120C3H1 New Stock, IXYB82N120C3H1 Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN; IXYB82N120C3H1, #IGBT_Module, #IGBT, #IXYB82N120C3H1
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixyb82n120c3h1.html

Manufacturer Part Number: IXYB82N120C3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 160 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1040 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 295 nsTurn-on Time-Nom (ton): 119 ns Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN

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