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IXYS IXYH40N120C3D1 New IGBT Module

IXYH40N120C3D1
# IXYS , #IXYH40N120C3D1, #IGBT_Module, #IGBT, IXYH40N120C3D1 Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXYH40
  • Category: IGBT Module
  • Manufacturer: IXYS
  • Package Type:
  • Date Code: Lead free / RoHS Compliant
  • Available Qty: 1830

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IXYH40N120C3D1 Description

Sell IXYH40N120C3D1, # IXYS #IXYH40N120C3D1 New Stock, IXYH40N120C3D1 Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXYH40N120C3D1, #IGBT_Module, #IGBT, #IXYH40N120C3D1
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixyh40n120c3d1.html
Manufacturer Part Number: IXYH40N120C3D1
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Part Package Code: TO-247AD
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
Manufacturer: IXYS Corporation
Risk Rank: 2.14
Additional Feature: AVALANCHE RATED
Case Connection: COLLECTOR
Collector Current-Max (IC): 64 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max: 5 V
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-247AD
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 480 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 178 ns
Turn-on Time-Nom (ton): 99 ns
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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