HITACHI MBM200BS6

  • MBM200BS6

MBM200BS6 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE; MBM200BS6

· Categories: IGBT
· Manufacturer: HITACHI
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 46
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Content last revised on April 30, 2023

Manufacturer Part Number: MBM200BS6Part Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPart Package Code: MODULEPackage Description: ,Manufacturer: Hitachi LtdRisk Rank: 5.19Additional Feature: HIGH SPEED, ULTRA SOFT FAST RECOVERYCase Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODENumber of Elements: 2Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-on Time-Nom (ton): 400 ns Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE

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