Content last revised on July 28, 2023
Manufacturer Part Number: MBN1200D25BPart Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-XUFM-X9Manufacturer: Hitachi LtdRisk Rank: 5.19Additional Feature: HIGH RELIABILITY, LOW NOISECase Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 2500 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 12000 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 4400 nsTurn-on Time-Nom (ton): 2700 nsVCEsat-Max: 3.7 V Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel
