Toshiba MG15Q6ES42 IGBT Module

MG15Q6ES42 Description

MG15Q6ES42 GTR Module Silicon N Channel IGBT; N CHANNEL IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS); 15 Amp; 1200 Volt

MG15Q6ES42  0.41 lbs

Target_Applications

MG15Q6ES42 could be used in High Power Switching / Motor Control Applications

Features

The Electrodes are Isolated from Case.

6 IGBTs are Built Into 1 Package.

Enhancement-Mode

Low Saturation Voltage: VCE (sat) =4.0V (Max.)

High Speed :tf=0.5µs (Max.)  trr=0.5µs (Max.)

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :25A

Collector current Icp 1ms Tc=25°C :50A

Collector power dissipation Pc:125W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3 N·m