MG50Q1BS11 Description
MG50Q1BS11 power transistor module
MG50Q1BS11 0.20 lbs
Target_Applications
MG50Q1BS11 could be used in High Power Switching Applications. Motor Control Applications;
Features
High Input Impedance
High Speed:tf=1.0ps(Max.)
Low Saturation Voltage: VCE(sat) = 2.7V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case.
MAXIMUM RATINGS (Ta =25°C)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:300W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 N·m
