#TOSHIBA, #MG600Q2YS60A, #IGBT_Module, #IGBT, MG600Q2YS60A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MG600Q2YS60A
Manufacturer Part Number: MG600Q2YS60APart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X11Pin Count: 11Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X11Number of Elements: 2Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1400 nsTurn-on Time-Nom (ton): 500 ns Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11