Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IXYS MIO1200-25E10

  • MIO1200-25E10

MIO1200-25E10 Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, MODULE-9; MIO1200-25E10

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 203
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on June 1, 2023

Manufacturer Part Number: MIO1200-25E10Pbfree Code: YesPart Life Cycle Code: Lifetime BuyIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-9Pin Count: 9Manufacturer: IXYS CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 2500 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, MODULE-9

More from IXYS