#IXYS, #MIXA10W1200TML, #IGBT_Module, #IGBT, MIXA10W1200TML Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES,; MIXA10W1200TML
Manufacturer Part Number: MIXA10W1200TMLRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.71Collector Current-Max (IC): 17 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 65 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES,