#IXYS, #MIXA20W1200MC, #IGBT_Module, #IGBT, MIXA20W1200MC Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-18; MIXA20W1200MC
Manufacturer Part Number: MIXA20W1200MCPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 18Manufacturer: IXYS CorporationRisk Rank: 5.66Case Connection: ISOLATEDCollector Current-Max (IC): 28 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-18