#IXYS, #MIXA61H1200ED, #IGBT_Module, #IGBT, MIXA61H1200ED Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES,; MIXA61H1200ED
Manufacturer Part Number: MIXA61H1200EDRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.27Collector Current-Max (IC): 85 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 290 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES,