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IXYS MIXA61H1200ED

  • MIXA61H1200ED
  • MIXA61H1200ED Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES,; MIXA61H1200ED

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 333
    MOQ: 1 PC
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    Content last revised on October 26, 2023

    Manufacturer Part Number: MIXA61H1200EDRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.27Collector Current-Max (IC): 85 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 290 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES,