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IXYS MMIX1X100N60B3H1

  • MMIX1X100N60B3H1
  • MMIX1X100N60B3H1 Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel,; MMIX1X100N60B3H1

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 622
    MOQ: 1 PC
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    Content last revised on December 13, 2023

    Manufacturer Part Number: MMIX1X100N60B3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: SMALL OUTLINE, R-PDSO-G21Manufacturer: IXYS CorporationRisk Rank: 5.73Additional Feature: AVALANCHE RATEDCase Connection: ISOLATEDCollector Current-Max (IC): 105 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PDSO-G21Number of Elements: 1Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 92 ns Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel,