IXYS MMIX1X100N60B3H1

  • MMIX1X100N60B3H1

MMIX1X100N60B3H1 Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel,; MMIX1X100N60B3H1

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 622
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on December 13, 2023

Manufacturer Part Number: MMIX1X100N60B3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: SMALL OUTLINE, R-PDSO-G21Manufacturer: IXYS CorporationRisk Rank: 5.73Additional Feature: AVALANCHE RATEDCase Connection: ISOLATEDCollector Current-Max (IC): 105 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PDSO-G21Number of Elements: 1Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 92 ns Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel,

More from IXYS