#Freescale Semiconductor, #MRF1535FNT1, #IGBT_Module, #IGBT, MRF1535FNT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA; MRF1535FNT1
Manufacturer Part Number: MRF1535FNT1Rohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-PDFM-F6ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 6.78Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 6 ADrain Current-Max (ID): 6 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJEDEC-95 Code: TO-272BAJESD-30 Code: R-PDFM-F6JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 135 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA