#IXYS, #MUBW30_12A6K, #IGBT_Module, #IGBT, MUBW30-12A6K Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-25; MUBW30-12A6K
Manufacturer Part Number: MUBW30-12A6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X25JESD-609 Code: e3Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-25