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IXYS MUBW35-12E7

  • MUBW35-12E7

MUBW35-12E7 Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MUBW35-12E7

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 142
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Content last revised on June 28, 2023

Manufacturer Part Number: MUBW35-12E7Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-24Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.64Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 52 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X20JESD-609 Code: e3Number of Elements: 7Number of Terminals: 20Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 225 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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