#IXYS, #MWI15_12A6K, #IGBT_Module, #IGBT, MWI15-12A6K Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24; MWI15-12A6K
Manufacturer Part Number: MWI15-12A6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 19 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X13JESD-609 Code: e3Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24