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IXYS MWI15-12A6K

  • MWI15-12A6K

MWI15-12A6K Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24; MWI15-12A6K

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 471
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Content last revised on June 5, 2023

Manufacturer Part Number: MWI15-12A6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 19 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X13JESD-609 Code: e3Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24

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