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IXYS MWI225-12E9

  • MWI225-12E9

MWI225-12E9 Insulated Gate Bipolar Transistor, 355A I(C), 1200V V(BR)CES, N-Channel, MODULE-29; MWI225-12E9

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 167
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Content last revised on October 30, 2023

Manufacturer Part Number: MWI225-12E9Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 29Manufacturer: IXYS CorporationRisk Rank: 5.83Additional Feature: UL REGONIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 355 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X17JESD-609 Code: e3Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 355A I(C), 1200V V(BR)CES, N-Channel, MODULE-29

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