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IXYS MWI35-12E7 IGBT Module

#IXYS, #MWI35_12E7, #IGBT_Module, #IGBT, MWI35-12E7 Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel; MWI35-12E7

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 341
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MWI35-12E7 Specification

Sell MWI35-12E7, #IXYS #MWI35-12E7 Stock, MWI35-12E7 Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel; MWI35-12E7, #IGBT_Module, #IGBT, #MWI35_12E7
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi35-12e7.html

Manufacturer Part Number: MWI35-12E7Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Manufacturer: IXYS CorporationRisk Rank: 5.62Collector Current-Max (IC): 52 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICON Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel

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