#IXYS, #MWI35_12E7, #IGBT_Module, #IGBT, MWI35-12E7 Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel; MWI35-12E7
Manufacturer Part Number: MWI35-12E7Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Manufacturer: IXYS CorporationRisk Rank: 5.62Collector Current-Max (IC): 52 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICON Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel