IXYS MWI50-12A7T

  • MWI50-12A7T

MWI50-12A7T Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; MWI50-12A7T

· Categories: IGBT
· Manufacturer: IXYS
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 7
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Content last revised on September 8, 2022

Manufacturer Part Number: MWI50-12A7TPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 2.22Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 85 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13JESD-609 Code: e3Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 350 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19

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