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NIEC P2H4M440L

  • P2H4M440L
  • P2H4M440L Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8; P2H4M440L

    · Categories: IGBT
    · Manufacturer: NIEC
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 267
    MOQ: 1 PC
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    Content last revised on June 28, 2023

    Manufacturer Part Number: P2H4M440LPart Life Cycle Code: TransferredIhs Manufacturer: NIHON INTER electronicS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X8Pin Count: 8Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.69Case Connection: ISOLATEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 21 ADrain-source On Resistance-Max: 0.21 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 60 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

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