#NIEC, #P2H4M440L, #IGBT_Module, #IGBT, P2H4M440L Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: P2H4M440LPart Life Cycle Code: TransferredIhs Manufacturer: NIHON INTER electronicS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X8Pin Count: 8Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.69Case Connection: ISOLATEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 21 ADrain-source On Resistance-Max: 0.21 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 60 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8