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NIEC P2H7M440L IGBT Module

#NIEC, #P2H7M440L, #IGBT_Module, #IGBT, P2H7M440L Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduct

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 135
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P2H7M440L Specification

Sell P2H7M440L, #NIEC #P2H7M440L Stock, P2H7M440L Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8; P2H7M440L, #IGBT_Module, #IGBT, #P2H7M440L
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Manufacturer Part Number: P2H7M440LPart Life Cycle Code: Lifetime BuyIhs Manufacturer: KYOCERA CORPPackage Description: MODULE-8Manufacturer: KYOCERA CorporationRisk Rank: 5.27Case Connection: ISOLATEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 35 ADrain-source On Resistance-Max: 0.12 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 100 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

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