#NIEC, #P2H7M440L, #IGBT_Module, #IGBT, P2H7M440L Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: P2H7M440LPart Life Cycle Code: Lifetime BuyIhs Manufacturer: KYOCERA CORPPackage Description: MODULE-8Manufacturer: KYOCERA CorporationRisk Rank: 5.27Case Connection: ISOLATEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 35 ADrain-source On Resistance-Max: 0.12 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 100 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8