P760A06 Features / Advantages:● Package with DCB ceramic● Improved temperature and power cycling● Planar passivated chips● Very low forward voltage drop● Very low leakage current● NTC● X2PT - 2nd generation Xtreme light Punch Through● Rugged X2PT design results in: - short circuit rated for 10 μsec - very low gate charge - low EMI - square RBSOA @ 2x Ic● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:180A
Collector current Icp:360A
Collector power dissipation Pc:500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon
