PD55003S-E-E IGBT Module

Feature

•EXCELLENT THERMAL STABILITY

•COMMON SOURCE CONFIGURATION

•POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V

•NEW RF PLASTIC PACKAGEDESCRIPTION

The PD55003 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF powertransistor. It is designed for high gain, broad bandcommercial and industrial applications. It operatesat 12 V in common source mode at frequencies ofup to 1 GHz. PD55003 boasts the excellent gain,linearity and reliability of ST’s latest LDMOS tech-nology mounted in the first true SMD plastic RFpower package, PowerSO-10RF. PD55003’s su-perior linearity performance makes it an ideal so-lution for car mobile radio.The PowerSO-10 plastic package, designed to of-fer high reliability, is the first ST JEDEC approved,high power SMD package. It has been speciallyoptimized for RF needs and offers excellent RFperformances and ease of assembly

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

V(BR)DSS Drain-Source Voltage 40V

VGS Gate-Source Voltage ±20V

ID Drain Current 2.5A

PDISS Power Dissipation (@ Tc = 70°C) 31.7 W

Tj Max. Operating Junction Temperature 165°C

TSTG Storage Temperature -65 to +150°C

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance 3.0°C/W

DYNAMIC

P1dB VDD = 12.5 V IDQ = 50 mA f = 500 MHz 3W

GPVDD = 12.5 V IDQ = 50 mAPOUT = 3 W f = 500 MHz 14~17 dB