ST PD55015S-E IGBT Module

PD55015S-E Product details

Description

The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015’s superior linearity performance makes it an ideal solution for car mobile radio.

General features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 15W with 14dB gain @ 500MHz / 12.5V

■ New RF plastic package

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

V(BR)DSS Drain-Source Voltage 40V

VGS Gate-Source Voltage ±20V

ID Drain Current 5A

PDISS Power Dissipation (@ Tc = 70°C) 73 W

Tj Max. Operating Junction Temperature 165°C

TSTG Storage Temperature -65 to +150°C

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance 1.2°C/W

DYNAMIC

P1dB VDD = 12.5 V IDQ = 50 mA f = 500 MHz 15W

GPVDD = 12.5 V IDQ = 50 mAPOUT = 3 W f = 500 MHz 12~14 dB