#STMicroelectronics, #PD84008L_E, #IGBT_Module, #IGBT, PD84008L-E RF Power LDMOS transistor; PD84008L-E
Manufacturer Part Number: PD84008L-EBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPackage Description: CHIP CARRIER, S-PQCC-N5Pin Count: 14ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 1.52Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 7 ADrain Current-Max (ID): 7 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: S-PQCC-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: CHIP CARRIERPeak Reflow Temperature (Cel): 225Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 26.7 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: NO LEADTerminal Position: QUADTime RF Power LDMOS transistor