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NIEC PDMB200B12C2 New IGBT Module

#NIEC, #PDMB200B12C2, #IGBT_Module, #IGBT, PDMB200B12C2 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB200B12C2

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 9
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PDMB200B12C2 Specification

Sell PDMB200B12C2, #NIEC #PDMB200B12C2 New Stock, PDMB200B12C2 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB200B12C2, #IGBT_Module, #IGBT, #PDMB200B12C2
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Manufacturer Part Number: PDMB200B12C2Part Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: KYOCERA CorporationRisk Rank: 5.13Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 960 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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