Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

NIEC PDMB400B12C IGBT Module

#NIEC, #PDMB400B12C, #IGBT_Module, #IGBT, PDMB400B12C Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,; PDMB400B12C

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 272
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
Tags:
-- OR --

Request For Price Now !

PDMB400B12C Specification

Sell PDMB400B12C, #NIEC #PDMB400B12C Stock, PDMB400B12C Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,; PDMB400B12C, #IGBT_Module, #IGBT, #PDMB400B12C
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/pdmb400b12c.html

Manufacturer Part Number: PDMB400B12CPart Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: KYOCERA CorporationRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 400 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1900 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,

Latest Components
Infineon
Toshiba