#MITSUBISHI, #PM300DHA060, #IGBT_Module, #IGBT, PM300DHA060 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, H23, POWER MODULE-13; PM300DHA060
Manufacturer Part Number: PM300DHA060Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-PUFM-X13Pin Count: 13Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Additional Feature: CURRENT SENSE IGBT CHIP,DRIVE CIRCUITRY AND PROTECTION CIRCUITRY IN A MODULECollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X13Number of Elements: 2Number of Terminals: 13Operating Temperature-Max: 100 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1140 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, H23, POWER MODULE-13