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MITSUBISHI PM300DHA060

  • PM300DHA060
  • PM300DHA060 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, H23, POWER MODULE-13; PM300DHA060

    · Categories: IGBT
    · Manufacturer: MITSUBISHI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 98
    MOQ: 1 PC
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    Content last revised on May 18, 2023

    Manufacturer Part Number: PM300DHA060Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-PUFM-X13Pin Count: 13Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Additional Feature: CURRENT SENSE IGBT CHIP,DRIVE CIRCUITRY AND PROTECTION CIRCUITRY IN A MODULECollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X13Number of Elements: 2Number of Terminals: 13Operating Temperature-Max: 100 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1140 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, H23, POWER MODULE-13