Mitsubishi PM75CLA120 IGBT Module

a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1μm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. • 3φ 75A, 1200V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 11kW/15kW class inverter application Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:75A Collector current Icp:150A Collector power dissipation Pc:595W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 2.5~3.5 N·m Weight Typical value 380g