Content last revised on December 4, 2023
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1μm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.
• 3φ 75A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 11kW/15kW class inverter application
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:75A
Collector current Icp:150A
Collector power dissipation Pc:595W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical value 380g
