IXSN52N60AU1 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, MINIBLOC, COMBI PACK-4; IXSN52N60AU1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.