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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXSN52N60AU1

IXSN52N60AU1

IXSN52N60AU1 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, MINIBLOC, COMBI PACK-4; IXSN52N60AU1
VI-23W-IW

VI-23W-IW

VI-23W-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-23W-IW
VI-2N2-CV

VI-2N2-CV

VI-2N2-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-2N2-CV
VI-26M-IY

VI-26M-IY

VI-26M-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26M-IY
VI-25W-CV

VI-25W-CV

VI-25W-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-25W-CV
HBS033ZE-A

HBS033ZE-A

HBS033ZE-A DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid; HBS033ZE-A
VI-B3M-IU

VI-B3M-IU

VI-B3M-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B3M-IU
DMN2300UFL4-7

DMN2300UFL4-7

DMN2300UFL4-7 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; DMN2300UFL4-7
VUO62-18NO7

VUO62-18NO7

VUO62-18NO7 Bridge Rectifier Diode, 3 Phase, 48A, 1800V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO62-18NO7
P7Z9AAB900W

P7Z9AAB900W

P7Z9AAB900W Silicon Controlled Rectifier, 520000mA I(T), 1600V V(RRM); P7Z9AAB900W