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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-26H-EW

VI-26H-EW

VI-26H-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-26H-EW
VI-22J-EW

VI-22J-EW

VI-22J-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, MODULE-9; VI-22J-EW
IRGS4065PBF

IRGS4065PBF

IRGS4065PBF Insulated Gate Bipolar Transistor; IRGS4065PBF
WG7025S

WG7025S

WG7025S Silicon Controlled Rectifier, 871.35 A, 2500 V, GATE TURN-OFF SCR; WG7025S
IGW25N120H3

IGW25N120H3

IGW25N120H3 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3; IGW25N120H3
S8X8ESAP

S8X8ESAP

S8X8ESAP Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; S8X8ESAP
DMC3028LSDX-13

DMC3028LSDX-13

DMC3028LSDX-13 Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; DMC3028LSDX-13
SKT290F12DU

SKT290F12DU

SKT290F12DU Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB; SKT290F12DU
MUBW50-06A8

MUBW50-06A8

MUBW50-06A8 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-24; MUBW50-06A8
T85HFL40S05

T85HFL40S05

T85HFL40S05 Rectifier Diode, 1 Phase, 1 Element, 85A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-55, T-MODULE-2; T85HFL40S05