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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

C358B

C358B

C358B Silicon Controlled Rectifier, 235.5A I(T)RMS, 240000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T62, 3 PIN; C358B
APTGF30A60T1G

APTGF30A60T1G

APTGF30A60T1G Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF30A60T1G
ST083S10PFP0

ST083S10PFP0

ST083S10PFP0 Silicon Controlled Rectifier, 85000mA I(T), 1000V V(DRM); ST083S10PFP0
2SD1733TLP

2SD1733TLP

2SD1733TLP Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-63, 3 PIN; 2SD1733TLP
DF1502ST-G

DF1502ST-G

DF1502ST-G Bridge Rectifier Diode, 1.5A, 200V V(RRM),; DF1502ST-G
92MT140KB

92MT140KB

92MT140KB Silicon Controlled Rectifier, 1400V V(DRM), 1400V V(RRM), 3 Element; 92MT140KB
BAV99WT-TP

BAV99WT-TP

BAV99WT-TP Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; BAV99WT-TP
IRGS6B60KDTRRP

IRGS6B60KDTRRP

IRGS6B60KDTRRP Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRGS6B60KDTRRP
FCA36N60NF

FCA36N60NF

FCA36N60NF Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P, 450-TUBE; FCA36N60NF
VI-JTM-EX

VI-JTM-EX

VI-JTM-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-JTM-EX