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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B14-CW

VI-B14-CW

VI-B14-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B14-CW
CM150EXS-24S

CM150EXS-24S

CM150EXS-24S Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES; CM150EXS-24S
MIXA40W1200TML

MIXA40W1200TML

MIXA40W1200TML Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MIXA40W1200TML
FST8145A

FST8145A

FST8145A Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, ROHS COMPLIANT, MINIMOD-3; FST8145A
ND432021

ND432021

ND432021 Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 2000V V(DRM), 2000V V(RRM), 2 Element, POW-R-BLOK-7; ND432021
LD430850

LD430850

LD430850 Silicon Controlled Rectifier, 900A I(T)RMS, 500000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7; LD430850
L6008L8TP

L6008L8TP

L6008L8TP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN; L6008L8TP
VBE17-12NO7

VBE17-12NO7

VBE17-12NO7 Bridge Rectifier Diode, 1 Phase, 19A, 1200V V(RRM), Silicon, ECOPAC-4; VBE17-12NO7
IXBF32N300

IXBF32N300

IXBF32N300 Insulated Gate Bipolar Transistor, 40A I(C), 3000V V(BR)CES, N-Channel, ISOPLUS, I4PAC-3; IXBF32N300
APTGT35A120D1G

APTGT35A120D1G

APTGT35A120D1G Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT35A120D1G