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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VS-SD403C04S10C

VS-SD403C04S10C

VS-SD403C04S10C Rectifier Diode, 1 Phase, 1 Element, 430A, 400V V(RRM), Silicon, DO-200AA,; VS-SD403C04S10C
T6270625B4DN

T6270625B4DN

T6270625B4DN Silicon Controlled Rectifier, 392.5A I(T)RMS, 600V V(RRM), 1 Element, T62, 3 PIN; T6270625B4DN
SK150DB120D

SK150DB120D

SK150DB120D Power Bipolar Transistor, 150A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin; SK150DB120D
SBAV199LT3G

SBAV199LT3G

SBAV199LT3G 70 V Switching Diode, dual, series, SOT-23 (TO-236) 3 LEAD, 10000-REEL; SBAV199LT3G
IXYP20N120C3

IXYP20N120C3

IXYP20N120C3 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; IXYP20N120C3
CM431690

CM431690

CM431690 Silicon Controlled Rectifier, 140A I(T)RMS, 90000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, POW-R-BLOK-7; CM431690
DMN4060SVT-7

DMN4060SVT-7

DMN4060SVT-7 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; DMN4060SVT-7
DMG264H00R

DMG264H00R

DMG264H00R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN; DMG264H00R
MURT30020

MURT30020

MURT30020 200V 300A Silicon Super Fast Recovery Rectifier in Three Tower Package; MURT30020
1MBI600NP-060

1MBI600NP-060

1MBI600NP-060 IGBT Module In-stock / Fuji Electric: 600V 600A high-speed switching. 90-day warranty, AC motor control. Global fast shipping. Get quote.