IGBT Modules - Transistors from Mitsubishi & Fuji - Page 2536

BTB08-800CW3G

BTB08-800CW3G 4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN; BTB08-800CW3G

ON Semiconductor Qty: 1481pcs

MCD26-14IO8B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, TO-240AA, 4 PIN; MCD26-14IO8B

IXYS Qty: 1497pcs

VI-26F-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26F-IV

VICOR Qty: -40pcs

TM55EZ-H Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TM55EZ-H

MITSUBISHI Qty: 152pcs

FGT412 Insulated Gate Bipolar Transistor; FGT412

Sanken Qty: 1219pcs

IXXH50N60C3 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXXH50N60C3

IXYS Qty: 1250pcs

APTGT100DA60T1G Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT100DA60T1G

Microsemi Power Products Group Qty: 787pcs

T1050H-6G 10 A - 600 V - 150 °C H-series Triacs; T1050H-6G

STMicroelectronics Qty: 1219pcs

IRGP4063D1-EPBF Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,; IRGP4063D1-EPBF

International Rectifier Qty: 574pcs

MSKD60-12 Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, CASE D1, 3 PIN; MSKD60-12

Microsemi Power Products Group Qty: 1274pcs