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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B2L-CU

VI-B2L-CU

VI-B2L-CU DC-DC Booster Module; VI-B2L-CU
UFT12780A

UFT12780A

UFT12780A Rectifier Diode, 1 Phase, 2 Element, 60A, 800V V(RRM), Silicon,; UFT12780A
MMBZ5230BS-7-F

MMBZ5230BS-7-F

MMBZ5230BS-7-F Zener Diode, 4.7V V(Z), 4.99%, 0.2W, Silicon, Unidirectional, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; MMBZ5230BS-7-F
SW30CXC21C

SW30CXC21C

SW30CXC21C Rectifier Diode, 1 Phase, 1 Element, 5300A, 3000V V(RRM), Silicon,; SW30CXC21C
GA200TS60U

GA200TS60U

GA200TS60U Insulated Gate Bipolar Transistor, 265A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7; GA200TS60U
VI-JTZ-EW

VI-JTZ-EW

VI-JTZ-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JTZ-EW
NSBC114YDXV6T5G

NSBC114YDXV6T5G

NSBC114YDXV6T5G Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL; NSBC114YDXV6T5G
MMSTA63-7-F

MMSTA63-7-F

MMSTA63-7-F Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3; MMSTA63-7-F
SI5905BDC-T1-GE3

SI5905BDC-T1-GE3

SI5905BDC-T1-GE3 Power Field-Effect Transistor, 3.5A I(D), 8V, 0.08ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8; SI5905BDC-T1-GE3
VI-23H-EV

VI-23H-EV

VI-23H-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-23H-EV