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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SD1624S-TD-E

2SD1624S-TD-E

2SD1624S-TD-E Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SD1624S-TD-E
APTGF150X60E3G

APTGF150X60E3G

APTGF150X60E3G Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-33; APTGF150X60E3G
JANTXV2N3735

JANTXV2N3735

JANTXV2N3735 Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3; JANTXV2N3735
L512

L512

L512 Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-6; L512
GBU6J

GBU6J

GBU6J 6 A Bridge Rectifier, 800-TUBE; GBU6J
S8006L

S8006L

S8006L Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S8006L
MSCD120-12

MSCD120-12

MSCD120-12 Rectifier Diode, 1 Phase, 2 Element, 120A, 1200V V(RRM), Silicon, CASE D1, 3 PIN; MSCD120-12
KBPC5006-G

KBPC5006-G

KBPC5006-G Bridge Rectifier Diode, 50A, 600V V(RRM),; KBPC5006-G
SBC847CDW1T1G

SBC847CDW1T1G

SBC847CDW1T1G Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SBC847CDW1T1G
APT40GR120B2D30

APT40GR120B2D30

APT40GR120B2D30 Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel; APT40GR120B2D30