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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-23Y-IW

VI-23Y-IW

VI-23Y-IW DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-23Y-IW
VUB120-12NO2

VUB120-12NO2

VUB120-12NO2 Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, MODULE-16; VUB120-12NO2
WG10025S

WG10025S

WG10025S Silicon Controlled Rectifier, 934.15 A, 2500 V, GATE TURN-OFF SCR; WG10025S
DRA9152Z0L

DRA9152Z0L

DRA9152Z0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN; DRA9152Z0L
VI-26F-IW

VI-26F-IW

VI-26F-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-26F-IW
VSKC320-08

VSKC320-08

VSKC320-08 Rectifier Diode, 1 Phase, 2 Element, 320A, 800V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-3; VSKC320-08
VI-21D-EU

VI-21D-EU

VI-21D-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-21D-EU
MSAD200-08

MSAD200-08

MSAD200-08 Rectifier Diode, 1 Phase, 2 Element, 200A, 800V V(RRM), Silicon, CASE D2, 3 PIN; MSAD200-08
SKT240F10DT

SKT240F10DT

SKT240F10DT Silicon Controlled Rectifier, 450A I(T)RMS, 240000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB; SKT240F10DT
SEMIX302GB066HDS

SEMIX302GB066HDS

SEMIX302GB066HDS Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN; SEMIX302GB066HDS